Oxide thickness dependence of photocurrent for the GeO₂/Ge film systemMATSUO, Y; OISHI, K.Applied surface science. 1996, Vol 100-01, pp 248-251, issn 0169-4332Conference Paper

Technology developement strategies for the 21st centuryBOHR, M. T.Applied surface science. 1996, Vol 100-01, pp 534-540, issn 0169-4332Conference Paper

A general procedure for extracting quantitative depth information from take-off-angle-resolved XPS and AESGRIES, W. H.Applied surface science. 1996, Vol 100-01, pp 41-46, issn 0169-4332Conference Paper

High purity ozone oxidation on hydrogen passivated silicon surfaceKUROKAWA, A; ICHIMURA, S.Applied surface science. 1996, Vol 100-01, pp 436-439, issn 0169-4332Conference Paper

Real-time analysis of III-V-semiconductor epitaxial growthRICHTER, W; ZETTLER, J.-T.Applied surface science. 1996, Vol 100-01, pp 465-477, issn 0169-4332Conference Paper

IVC-13/ICSS-9KAWAJI, S; KLEYN, A. W; MURATA, Y et al.Surface science. 1996, Vol 357-58, issn 0039-6028, 1027 p.Conference Proceedings

IVC-13/ICSS-9: Proceedings of the 13th International Vacuum Congress and the 9th International Conference on Solid Surfaces, Yokohama, Japan, 25-29 September 1995SHIMIZU, R; OECHSNER, H; MCGUIRE, G et al.Applied surface science. 1996, Vol 100-01, issn 0169-4332, 702 p.Conference Proceedings

Hydrogen desorption characteristics of composite Co-TiN nanoparticlesSAKKA, Y; OHNO, S.Applied surface science. 1996, Vol 100-01, pp 232-237, issn 0169-4332Conference Paper

Luminescent properties of an anodically oxidized P-doped silicon waferIWASO, M; ARAKAWA, T.Applied surface science. 1996, Vol 100-01, pp 147-151, issn 0169-4332Conference Paper

Molecular beam epitaxy of GaAs/Al_xGa_1-xAs/In_yGa_1-yAs heterostructures for opto-electronic devices : control of growth parametersKÖHLER, K.Applied surface science. 1996, Vol 100-01, pp 383-390, issn 0169-4332Conference Paper

Monte Carlo simulation of ion-induced kinetic electron emission from a metal surfaceKAWATA, J; OHYA, K.Applied surface science. 1996, Vol 100-01, pp 338-341, issn 0169-4332Conference Paper

STM analysis of wet-chemically prepared H-Si(001) surfaceMORITA, Y; TOKUMOTO, H.Applied surface science. 1996, Vol 100-01, pp 440-443, issn 0169-4332Conference Paper

Infrared external reflection spectroscopy of self-assembled monolayer films on Si substrate with a buried metal layer (BML) structureKOBAYASHI, Y; OGINO, T.Applied surface science. 1996, Vol 100-01, pp 407-411, issn 0169-4332Conference Paper

Low temperature etching of Si and PR in high density plasmasPUECH, M; MAQUIN, P.Applied surface science. 1996, Vol 100-01, pp 579-582, issn 0169-4332Conference Paper

Quantitative XPS : non-destructive analysis of surface nano-structuresTOUGAARD, S.Applied surface science. 1996, Vol 100-01, pp 1-10, issn 0169-4332Conference Paper

Charge-up and charge compensation on monochromatized X-ray photoelectron spectroscopic measurements of alumina and glassTOMIZUKA, H; AYAME, A.Applied surface science. 1996, Vol 100-01, pp 243-247, issn 0169-4332Conference Paper

NO interaction with thermally activated CaO and SrO surfacesYANAGISAWA, Y.Applied surface science. 1996, Vol 100-01, pp 256-259, issn 0169-4332Conference Paper

Nitridation of GaAs surfaces using nitrogen molecules cracked by a hot tungsten filamentMAKIMOTO, T; KOBAYASHI, N.Applied surface science. 1996, Vol 100-01, pp 403-406, issn 0169-4332Conference Paper

Processes in low-energy ion-surface collisions : preferential sputtering, defect and adatom formationGNASER, H.Applied surface science. 1996, Vol 100-01, pp 316-328, issn 0169-4332Conference Paper

Quantitative relationship between the work function and transfer ratio of a potassium-adsorbed MIM cathodeKUSUNOKI, T; SUZUKI, M.Applied surface science. 1996, Vol 100-01, pp 207-210, issn 0169-4332Conference Paper

Surface chemistry of materials deposition at atomic layer levelSUNTOLA, T.Applied surface science. 1996, Vol 100-01, pp 391-398, issn 0169-4332Conference Paper

Auger electron peaks of Cu in XPSJO, M; TANAKA, A.Applied surface science. 1996, Vol 100-01, pp 11-14, issn 0169-4332Conference Paper

Behavior of ultrathin layers of Co on Si and Ge systemsPRABHAKARAN, K; OGINO, T.Applied surface science. 1996, Vol 100-01, pp 518-521, issn 0169-4332Conference Paper

Effect of gas adsorption on the segregation behavior of substrate Cu on Ti filmYOSHITAKE, M; YOSHIHARA, K.Applied surface science. 1996, Vol 100-01, pp 203-206, issn 0169-4332Conference Paper

Routine measurement of the absolute As₄ flux in a molecular beam epitaxy system with conventional RHEED equipmentHEYN, C; HARSDORFF, M.Applied surface science. 1996, Vol 100-01, pp 494-497, issn 0169-4332Conference Paper